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| APTGT50TA170P Triple phase leg Trench IGBT(R) Power Module VBUS1 VBUS2 VBUS3 VCES = 1700V IC = 50A @ Tc = 80C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control G1 G3 G5 E1 U E3 V E5 W G2 G4 G6 E2 0/VBUS1 E4 0/VBUS2 E6 0/VBUS3 Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration * Kelvin emitter for easy drive Benefits * Stable temperature behavior * Very rugged * Solderable terminals for easy PCB mounting * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Very low (12mm) profile * Each leg can be easily paralleled to achieve a phase leg of three times the current capability * Module can be configured as a three phase bridge * Module can be configured as a boost followed by a full bridge APTGT50TA170P - Rev 0, September, 2004 VBUS 1 VBUS 2 VBUS 3 G1 0/VBUS 1 E1 E2 G2 0/VBUS 2 G3 E3 E4 G4 0/VBUS 3 G5 E5 E6 G6 U V W Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Save Operating Area Max ratings 1700 70 50 100 20 310 100A @ 1600V Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed APT website - http://www.advancedpower.com 1-5 APTGT50TA170P All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) VGE(th) IGES Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, IC = 2.5mA VGE = 0V, VCE = 1700V Tj = 25C VGE =15V IC = 50A Tj = 125C VGE = VCE , IC = 2.5 mA VGE = 20V, VCE = 0V Min 1700 Typ Max 5 Unit V mA V V nA 2.0 2.4 5.0 2.4 6.5 600 Dynamic Characteristics Symbol Cies Crss Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V ;VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 900V IC = 50A R G = 22 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 50A R G = 22 Diode Min Typ 4400 150 200 90 720 90 220 90 820 110 29 22 Max Unit pF ns ns mJ Eon includes diode reverse recovery In accordance with JEDEC standard JESD24-1 Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM VF Qrr Maximum Reverse Leakage Current Diode Forward Voltage Reverse Recovery Charge Test Conditions VR=1700V IF = 50A VGE = 0V IF = 50A VR = 900V di/dt =990A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 1700 Typ Max 250 500 2.2 Unit V A V C APTGT50TA170P - Rev 0, September, 2004 1.8 1.9 19 30 APT website - http://www.advancedpower.com 2-5 APTGT50TA170P Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 3500 -40 -40 -40 3 Min Typ Max 0.4 0.7 150 125 100 5 250 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To heatsink M6 Package outline 5 places (3:1) APT website - http://www.advancedpower.com 3-5 APTGT50TA170P - Rev 0, September, 2004 APTGT50TA170P Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 100 T J = 125C 125 100 T J=25C 75 IC (A) VGE =17V VGE=15V IC (A) 75 50 25 0 0 0.5 1 1.5 2 2.5 VCE (V) 3 3.5 4 TJ=125C 50 V GE=13V 25 VGE=9V 0 0 1 2 3 VCE (V) 4 5 125 100 Transfert Characteristics 100 80 E (mJ) 60 40 20 0 5 6 7 8 V GE (V) 9 10 11 0 Energy losses vs Collector Current VCE = 900V VGE = 15V RG = 22 T J = 125C Eon TJ =25C IC (A) 75 50 T J=125C Eoff 25 0 25 50 IC (A) 75 100 125 Switching Energy Losses vs Gate Resistance 125 100 E (mJ) 75 50 25 0 0 20 40 60 Gate Resistance (ohms) 80 VCE = 900V VGE =15V IC = 50A TJ = 125C Eon Reverse Safe Operating Area 120 100 80 IC (A) 60 40 20 0 0 400 800 1200 1600 V CE (V) V GE=15V T J=125C RG=22 Eoff 0.45 Thermal Impedance (C/W) 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0.00001 0.1 0.05 0.9 0.7 0.5 0.3 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration IGBT Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) APT website - http://www.advancedpower.com 4-5 APTGT50TA170P - Rev 0, September, 2004 APTGT50TA170P Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 50 40 30 20 10 0 0 20 40 IC (A) 60 80 ZCS ZVS VCE=900V D=50% RG=22 TJ =125C TC=75C Forward Characteristic of diode 100 75 IC (A) TJ=25C 50 TJ=125C 25 hard switching 0 0 0.5 1 1.5 VF (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.8 Thermal Impedance (C/W) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10 0.7 0.5 0.3 0.9 Diode 0 0.00001 rectangular Pulse Duration (Seconds) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website - http://www.advancedpower.com 5-5 APTGT50TA170P - Rev 0, September, 2004 |
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